Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation - CMNE
Communication Dans Un Congrès Année : 2023

Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation

Résumé

Random Telegraph Noise (RTN) amplitudes are analyzed for different drain-source voltage biases in bulk MOSFETs issued from a CMOS 40 nm technology. The study highlights the modulation of RTN amplitudes due to the responsible trap's position along the channel from source to drain. We show that the carrier number fluctuation (CNF) model can still be very accurate for traps located around the middle of the channel, but either underestimates or overestimates the resulting current shift, when applied to traps near the drain or source regions.

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Dates et versions

hal-04742951 , version 1 (21-10-2024)

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Citer

Owen Gauthier, Sébastien Haendler, Quentin Rafhay, Christoforos Theodorou. Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation. 2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472748⟩. ⟨hal-04742951⟩
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