Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size - Dispositifs HypeRfréquences pour l'Electronique durAble et les Milieux complexeS
Proceedings/Recueil Des Communications Année : 2023

Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size

Résumé

The responsivity of microwave zero-bias detectors based on GaN high electron mobility transistors (HEMTs) is measured up to 110 GHz. A compact model based on static coefficients extracted from the DC output curves together with Sparameter measurements is able to replicate the detection results both when the radio-frequency power is fed into the drain or the gate terminals. A detailed analysis of the contribution of the gate-drain coupling to the RF responsivity allows to identify the origin of the frequency roll-off when shrinking the gate-size of the transistors.
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Dates et versions

hal-04712808 , version 1 (27-09-2024)

Identifiants

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Ignacio Íñiguez-De-La-Torre, Philippe Artillan, Gaudencio Paz-Martínez, Edouard Rochefeuille, Tomás González, et al.. Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size. 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), IEEE, pp.1-3, 2023, ⟨10.1109/INMMIC57329.2023.10321787⟩. ⟨hal-04712808⟩
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