Molecular beam epitaxial growth of 2D-boron nitride on Ni substrates
Résumé
2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. Based on spatially resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the two N and B main components and their relationship with an electronic coupling with Ni at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained although the material thickness is not homogeneous, showing triangular islands whose lateral size is limited to ~20 μm.
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